SPONTANEOUS GROWTH, PROPERTIES AND DEVICES OF III-V SEMICONDUCTOR NANOWIRES

Abstract: 

The project aims to create fundamental physical understanding and know-how on the spontaneous growth by molecular beam epitaxy (MBE) of III-V semiconductor nanowires, their properties and the development of vertical nanowire devices.

The work will focus on III-nitride (GaN, InN, AlN) semiconductors with less effort devoted to III-arsenide (GaAs, InAs, AlAs) compounds. The geometrical characteristics of semiconductor nanowires result to unique physical and chemical properties for nano electronic, photonic and sensing device applications:

  • defect-free lattice-mismatched heterostructures,
  • well defined conductivity nano-channels and
  • high surface area for chemical interactions and light extraction or absorption.

The novelty of our proposed research is founded on:

  • spontaneous growth (bottom-up approach) of III-V nanowires by MBE without metallic particle-catalysts,
  • selected positioning of nanowires by nano-patterning of crystalline substrates/epilayers,
  • excellent transport and optoelectronic properties of III-V semiconductors and
  • vertical nanowire device technology suitable for tera-level ultrahigh-density integration.

The work will be accomplished by three research teams with strong expertise in complementary areas, belonging to University of Crete, University of Thessaloniki and FORTH with the collaboration of researchers of Demokritos. This project will establish in Greece an internationally competitive activity in a selected area of semiconductor nanotechnology with strong potential for future exploitation.

Project info

Acronym:
NanoWIRE
Coordinating Institution:
University of Crete
Scientific Coordinator:
Georgakilas Alexandros
Research Team 2 Leader:
Komninou Philomila
Research Team 3 Leader:
Konstantinidis George

Stats

I.D.:
1441
Mis:
377284
Duration (months):
45
Budget:
600 000.00

Document Library

News

(22-06-2012) Ένταξη της Πράξης «ΘΑΛΗΣ – Πανεπιστήμιο Κρήτης – Αυθόρμητη ανάπτυξη, ιδιότητες και διατάξεις νανονημάτων των ημιαγωγών III-V», με MIS: 377284 στο Επιχειρησιακό Πρόγραμμα «ΕΚΠΑΙΔΕΥΣΗ ΚΑΙ ΔΙΑ ΒΙΟΥ ΜΑΘΗΣΗ» 2007-2013.  -ΑΠ10 (PDF|2,6 MB)